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通过距离与角度签名的快速和高保真EUV曲线面具优化

Weichen Huang, Yanqiu Li, He Yang

|November 14, 2024

概括

本研究引入了一种使用距离与角度签名 (DVAS) 的新方法,以优化EUV光刻中的曲线面罩. 与传统方法相比,DVAS显著减少了数据存储,并提高了模式准确性.

科学领域:

半导体制造业半导体制造业
摄影石版印刷 (photolithography) 是一种摄影方式.
计算式 lithography 的使用方法.

背景情况:

曲线面罩对于高级半导体节点的高质量成像至关重要.
目前的光学近距离校正 (OPC) 方法,如直接在边缘移动控制点 (基于MCED的OPC),需要大量的数据存储.

研究的目的:

引入一种新的方法来优化使用距离对角签名 (DVAS) 的曲线面罩.
为了减少设计数据存储空间,并提高优化效率在EUV光刻系统.

主要方法:

使用 1D 函数表示 2D 面罩边界,即距离对角签名 (DVAS).
应用DVAS及其第二个衍生品用于OPC.
将基于DVAS的OPC与基于MCED的OPC进行比较.

主要成果:

基于DVAS的OPC通过存储DVAS振幅变化而不是控制点移动来有效地减少存储空间.
与基于MCED的OPC相比,DVAS方法及其第二个衍生方法实现了较低的模式误差.
基于DVAS的OPC方法证明了处理时间的缩短.

结论:

DVAS是一种新且有效的工具,用于优化EUV光刻中的曲线面罩.
这种方法在减少数据存储,模式准确性和处理时间方面提供了显著的优势.
DVAS代表了下一代光刻技术的一个有前途的进步.

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