概括
这项研究引入了一种用于光纤的新型化辅助边缘合器,克服了制造限制. 它在O频段中实现了TE和TM两种偏振的低合损失和高灭绝比.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 在微电子领域的材料科学.
背景情况:
- 基于的边缘合器面临着由于最小宽度限制的制造挑战,限制了标准单模光纤接口的性能.
- 现有的设计在遵守严格的制造公差的同时努力实现高性能.
研究的目的:
- 提出并模拟一种新型的化辅助双蚀刻边缘合器.
- 为了实现高效的光学合和偏振分裂,用于O频段应用,最小制造宽度减少.
主要方法:
- 用化辅助的双蚀刻边缘合器的设计和模拟.
- 整合了细分的圆形状和集成的极化分裂功能.
- 使用光学模拟分析了合损失,灭绝比,偏振依赖性和0.5dB带宽.
主要成果:
- 建议的边缘合器达到0.53dB (TE) 和0.82dB (TM) 的最小合损失.
- 它显示了42dB (TE) 和18dB (TM) 的高平均灭绝比.
- 该设备表现出弱极化依赖 (平均差异为0.24dB) 和0.5dB带宽约为100nm的两个极化.
结论:
- 化辅助边缘合器有效地克服了最小制造宽度限制.
- 该设计整合了极化分裂,并在O频段实现了出色的光学性能指标.
- 这一进步为集成光子学中高性能光纤接口提供了一个有希望的解决方案.
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