点缺陷和离子间隙在二维多层过渡金属二甲基基因体记忆器中的作用
Mohit D Ganeriwala1, Alejandro Toral-López1, Estela Calaforra-Ayuso1
1Department of Electronics and Computer Technology, University of Granada, 18071 Granada, Spain.
ACS applied nano materials
|November 14, 2024
概括
仅凭内在点缺陷就不足以在多层过渡金属二甲基化物 (TMD) 中进行电阻切换. 金属原子对于触发TMD记忆器中的记忆行为至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二维材料,特别是过渡金属二甲基化物 (TMDs),由于其类似突触的特性和纳米尺度足迹,显示出神经形态计算的前景.
- 了解TMD记忆器的物理机制对于提高其可靠性能至关重要.
- 缺陷和金属原子对多层TMDs中的memristance的确切贡献仍然不清楚.
研究的目的:
- 系统地研究内在点缺陷和金属原子对多层TMD外平面导电性的影响.
- 为了澄清内在点缺陷在形成传导通道的作用,memristive行为.
- 确定金属原子的必要性,以便在基于TMD的memristors中实现电阻切换.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 非平衡格林函数 (NEGF) 的形式主义.
- 对具有2H和1T结构的二硫化物 (MoS2) 和二硫化物 (PtS2) 的分析.
主要成果:
- 内在的硫空缺,MoS2和PtS2的主导缺陷,不会独立地在外部偏差下引起电阻切换.
- 已经证明,金属原子的存在对于触发记忆机制至关重要.
- 单独的内在点缺陷不太可能为多层TMD中的价值变化记忆器件创建可控制的导电通道.
结论:
- 金属原子对于TMD的记忆效应至关重要,而不仅仅是内在点缺陷.
- 选择金属电极对于制造和优化TMD记忆器至关重要.
- 进一步的研究应该集中在缺陷和金属元素之间的相互作用,以实现先进的memristor设计.
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