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Updated: Jun 7, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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兴奋剂诱导的带隙收缩,以修改MoS2的电子结构,用于有机废水管理

Yuchen Zhang1,2,3, Yuehan Jia1,2,3, Yanjie Li1,2,3

  • 1Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, 130103, P. R. China. zhangyong@jlnu.edu.cn.

Dalton transactions (Cambridge, England : 2003)
|November 14, 2024
PubMed
概括

胺二硫化 (Ru-MoS2) 通过缩小带间隙来增强传感和环境补救. 这提高了检测污染物的灵敏度,并有效降解废水中的污染物.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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