表面再组合和自我加热之间的尺寸依赖的竞争效应对250 nm AlGaN 基的 DUV LED 的效率下降
Optics letters
|November 15, 2024
概括
优化深紫外发光二极管 (DUV LED) 涉及平衡芯片大小和p-AlGaN层厚度. 一个10nm的p-AlGaN层增强了光学功率密度,并减少了较小的DUV LED芯片中的热垂落.
科学领域:
- 半导体物理 半导体物理
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
背景情况:
- 深紫外线发光二极管 (DUV LED) 在各种应用中至关重要.
- 芯片大小显著影响DUVLED的性能,影响光取效率和重组率.
研究的目的:
- 为了研究基于AlGaN的翻转芯片DUVLED的不同芯片大小的电气和光学性能.
- 分析薄薄的p-AlGaN层对电流分布,表面重组和光学吸收的影响.
- 了解p-AlGaN层厚度对设备电阻和热垂落的影响.
主要方法:
- 使用不同芯片尺寸的250nmAlGaN基翻转芯片DUVLED的制造和表征.
- 在不同的条件下测量电气和光学性能.
- 分析电流传播,表面再组合,光吸收和热效应.
主要成果:
- 减少芯片大小提高了光提取效率,但也增加了表面非辐射重组.
- 一个10nm的p-AlGaN层有效地管理电流,抑制表面重组,并减少光吸收,提高光功率密度.
- 较小的DUV LED芯片由于改进的电流管理和减少的自我吸收而表现出抑制的热垂落.
- 设备阻力随着p-AlGaN层厚度显著增加,特别是在较小的芯片中.
结论:
- 一个10nm的p-AlGaN层是优于增强光功率密度和减轻小型DUV LED芯片中的热垂落.
- 仔细控制p-AlGaN层厚度对于管理小型DUV LED设计中的设备电阻至关重要.
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