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有机非挥发性2T内存单元采用非门式架构,实现二进制输出级别,增强噪声耐受性

Qiang Zhao¹, Hanlin Wang², Zhenjie Ni³

¹College of Science, Civil Aviation University of China, Tianjin, 300300, China.

Advanced materials (Deerfield Beach, Fla.)

|November 16, 2024

概括

一个新的2T有机记忆电池,具有 NOT-gate-like 设计,克服了灵活电子的不均性问题. 这种新的架构增强了可靠的物联网 (IoT) 存储阵列的噪声耐受性.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机工程计算机工程

背景情况:

有机非挥发性内存为灵活的电子和物联网设备提供了低成本的解决方案.
由粒度边界和缺陷引起的设备不均性阻碍了可靠的高密度内存阵列的开发.
传统的有机记忆细胞由于状态边缘狭窄和低噪声耐受性而遭受读取错误.

研究的目的:

提出一种具有 NOT 门类架构的新型 2T 存储电池,以解决设备不均性并增强噪声耐受性.
为了证明有机记忆细胞中的自我增强的噪声耐受机制.
探索可穿戴电子产品中低成本,电压可读内存的潜力.

主要方法:

概念化和设计建模一个新的2T内存细胞架构.
不管设备的不均性,对2T内存单元的噪声耐受性进行表征.
调查噪声耐受范围和二元电压可读存储状态.

主要成果:

一个新的2T内存单元采用 NOT-gate-like 架构成功设计和建模.
拟议的单元表现出自我增强的噪声耐受性,减轻设备不均的问题.
实现了明确的二进制输出电压和大噪声耐受范围.

结论:

新的2T记忆细胞架构有效地克服了传统有机记忆细胞的局限性.
这种设计使灵活的电子和物联网应用可靠,高密度的有机内存阵列.
1T2T FeRAM 细胞的进一步开发显示了可穿戴设备中低成本电压可读存储器的前景.

关键词:

铁电式记忆器是什么意思铁电随机访问存储器 (FeRAM) 是一种铁电随机访问存储器.噪音耐受度噪音耐受度有机非挥发性存储器 (ONVM)薄膜晶体管 (TFT) 的使用

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