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Updated: Jun 7, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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基于二维CuInP2S6 (CIPS) 和石墨烯异构结构的铁电场效应晶体管

Maheera Abdul Ghani1, Soumya Sarkar1, Yang Li1

  • 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS UK.

MRS energy & sustainability : a review journal
|November 18, 2024
PubMed
概括

这项研究研究了二维铁电CuInP2S6 (CIPS) 如何影响场效应晶体管中的石墨烯特性. CIPS诱导局部兴奋剂和极化歇斯底里,影响设备性能,特别是在不同温度下.

关键词:
两维材料是二维材料.铁电是铁电的发电源.石墨烯是一种石墨烯.纳米电子学纳米电子学范德瓦尔斯是什么意思

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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