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Updated: Jul 30, 2026

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在Si-终结的SiC上非传统的近平衡核化石墨烯 ((0001)) 表面

Haojie Huang1,2, Zebin Ren1,2, Xiao Xue1,2

  • 1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.

Angewandte Chemie (International ed. in English)
|November 19, 2024
PubMed
概括

这项研究揭示了石墨烯在碳化物 (SiC) 上的核化机制,详细介绍了独特的碳集群结构和生长途径. 这些发现澄清了用于高级半导体应用的SiC上的石墨烯生长.

关键词:
石墨烯是一种石墨烯.核化机制的核化机制SiC ((0001)) 基质的基底.理论上的计算理论上的计算.

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...