MoTe2晶体管的低频噪声:对双极载波运输和CYTOP兴奋剂的影响
Wonjun Shin1,2, Dong Hyun Lee3, Raksan Ko3
1Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
Discover nano
|November 19, 2024
概括
本研究探讨了MoTe2晶体管中的低频噪声,揭示了电子和孔传输的独特噪声源. 通过降低接触阻力效应,CYTOP兴奋剂对噪声产生影响,特别是在n型操作中.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学 是一种材料科学.
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 低频噪声 (LFN) 对于理解半导体设备操作和材料缺陷至关重要.
- 在双极晶体管中表征LFN仍然是一个未被探索的领域.
- 二化 (MoTe2) 是先进电子设备的一个有前途的材料.
研究的目的:
- 研究两极载波运输对MoTe2晶体管中LFN的影响.
- 分析CYTOP诱导的p型兴奋剂对LFN特征的影响.
- 确定接触电阻对不同运输方式噪声的影响.
主要方法:
- 制造和特征的MoTe2晶体管.
- 测量和分析低频噪声频谱.
- 应用CYTOP用于p型兴奋剂和随后的噪声分析.
主要成果:
- 在n型 (电子) 和p型 (孔) 运输中确定了1/f噪声的不同来源.
- 在n型模式下观察到接触电阻对噪声的影响更为显著.
- 证明CYTOP兴奋剂抑制了n型运输,并减少了接触电阻对过度噪声的影响.
结论:
- 两极载波运输显著影响MoTe2晶体管中的LFN.
- CYTOP剂有效调节载体类型,并减轻接触阻力对噪声的影响.
- 这项研究提供了对基于二维材料的双极晶体管噪声机制的见解.
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