相关实验视频

Updated: Jun 7, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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热稳定的Bi2Te3/WSe2 范德瓦尔斯接触器用于pMOSFETs应用程序

Wen Hsin Chang1, Shogo Hatayama2, Yuta Saito3,4,5

  • 1Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan. wh-chang@aist.go.jp.

Scientific reports
|November 20, 2024
PubMed
概括

德瓦尔斯的新型接触器使用甲化物 (Bi2Te3) 显著提高化 (WSe2) pMOSFET的性能. 这一突破为先进的电子产品提供了超过1000倍的电流改进和出色的热稳定性.

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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