表面氧空缺对CO2吸附及其激活到C2使用金属 (Cu,Pd,CuPd) 集群装载TiO2催化剂的作用:一项第一原则研究
Sajjad Hussain1, Lina Zhang1, Zhengzheng Xie1
1National & Local Joint Engineering Research Center for Applied Technology of Hybrid Nanomaterials, Henan University, Kaifeng 475004, China. xiezz@henu.edu.cn.
Physical chemistry chemical physics : PCCP
|November 20, 2024
概括
在M/TiO2催化剂中引入表面氧空缺,可显著提高二氧化碳 (CO2RR) 降解到乙烯 (C2H4) 的效果. 这些职位改善了二氧化碳吸附,并为多碳产品的形成提供了关键的C-C合.
科学领域:
- 催化剂是一种催化剂.
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
背景情况:
- 选择性转化二氧化碳 (CO2) 成为有价值的多碳产品,如乙烯 (C2H4) 是至关重要的,但受到高能量障碍阻碍的C-C合和多电子转移.
- 金属/TiO2 (M/TiO2) 催化剂,其中M = Cu,Pd或CuPd,被调查为二氧化碳还原反应 (CO2RR).
- 引入了表面氧空缺 (VO),以潜在地克服催化限制.
研究的目的:
- 调查表面氧气空缺对M/TiO2催化剂对CO2RR对C2H4产生的影响.
- 通过使用理论计算,了解这些改造的催化剂上二氧化碳吸附和C-C合的机制.
主要方法:
- 密度功能理论 (DFT) 的计算用于设计和分析M/TiO2和M/TiO2-VO催化剂.
- 计算的重点是金属表面接口的二氧化碳吸附能量.
- 分析了反应途径,特别是C-C合和OCCO化,并进行了吉布斯自由能量计算.
主要成果:
- 表面的氧气空缺增强了Cu/TiO2-VO,Pd/TiO2-VO和CuPd/TiO2-VO催化剂上的二氧化碳吸附,并观察到强大的吸附能量.
- 虽然一些M/TiO2-VO位点对C2产品显示不活性,但Pd/TiO2,CuPd/TiO2和M/TiO2-VO接口有利于C-C合.
- 发现氧气空缺可以在CuPd/TiO2-VO接口上改善OCCO到C2H4的化.
结论:
- 表面的氧气空缺对于增强二氧化碳吸附和促进M/TiO2催化剂中的C-C合对于生产C2H4至关重要.
- 由于OCCO化得到了改进,CuPd/TiO2-VO催化剂显示出有效的CO2RR到C2H4的巨大潜力.
- 理论见解指导了为选择性二氧化碳转化为有价值化学品的先进催化剂的开发.
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