MoS2:CVD

Hemanth Kumar Paidi1, Rishitha Mudunuri1, Deepu J Babu1,2

  • 1Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Sangareddy, Telangana 502285, India.

概括

这项研究比较了大气压化学蒸汽沉积 (APCVD) 和低压CVD (LPCVD) 用于合成二硫化 (MoS2) 薄膜. 在较低的温度下,LPCVD产生连续膜,而APCVD则导致扩散有限的三角形MoS2增长.

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