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通过贵重气体离子束缺陷工程,CsPbBr₃薄膜的浅缺陷和光学特性

Holger Fiedler¹, Jake Hardy¹, Jonathan E Halpert²

¹National Isotope Centre, GNS Science, Lower Hutt 5010, New Zealand.

|November 21, 2024

概括

贵族气体离子植入修改化 (CsPbBr₃) 薄膜,使光发光寿命翻倍. 这种技术通过分离核和电子损伤效应来控制光学性能.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
光电学是指光电子产品.

背景情况:

离子植入是修改无机半导体的一个关键技术.
它的应用在化 PeroVskites,如化 (CsPbBr),是较少的探索.
了解离子物质相互作用对于调整矿性质至关重要.

研究的目的:

为了研究贵重气体离子植入对CsPbBr₃薄膜光学特性的影响.
阐明核和电子停止在离子束修饰中的作用.
提供一种控制光发光寿命和量子产量的方法.

主要方法:

在CsPbBr₃薄膜中植入贵气离子 (Ar,Xe,Ne).
低离子流动 (<1 × 10^{14^{at·cm^-2) 和 20 keV 的加速电压.}}
光发光 (PL) 寿命和PL量子产量 (PLQY) 测量.

主要成果:

CsPbBr₃膜的光发光寿命与重贵气体 (Ar,Xe) 的低流量相比翻了一番.
这种增强归因于离子束诱导的通过核停止捕获浅的少数电荷载体.
PLQY的变化与电子停止功率相反相关;Ar减少了PLQY,而Ne增强了它.

结论:

高贵气离子植入有效地修改了CsPbBr3的光学特性.
核停止主导航母捕获和寿命增长,而电子停止则影响PLQY.
这项研究提供了一个框架,用于控制化 PeroVskites 中的离子植入损伤.

关键词:

缺陷缺陷缺陷缺陷缺陷化 PeroVskite 的使用情况离子束相互作用离子植入植入的离子植入.佩洛夫斯基特是一种矿.闪器的闪器是什么意思

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