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Updated: Jun 6, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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机电敏感性揭示了单分子连接处的破坏性量子干扰

Sebastiaan van der Poel1, Juan Hurtado-Gallego2, Matthias Blaschke3

  • 1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands.

Nature communications
|November 21, 2024
PubMed
概括

我们使用机械调制在室温下测量了单分子连接处的破坏性量子干扰下降. 热波动对于在环境条件下准确描述这些尖导电特征至关重要.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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