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连续波THz接收器配有补充的InGaAs,可实现132 dB的动态范围

Milan Deumer, Steffen Breuer, Shaffi Berrios

|November 22, 2024

概括

我们开发了新的太赫兹探测器,使用添加的甲 (InGaAs). 这些探测器表现出比铁化版本更好的10倍性能,在太赫兹光谱学中实现了创纪录的动态范围.

科学领域:

特拉赫兹 (THz) 光谱学
半导体设备物理半导体设备物理
材料科学材料科学材料科学

背景情况:

光导天线对于太赫兹 (THz) 产生和检测至关重要.
甲 (InGaAs) 是这些探测器的常见材料.
合铁 (Fe) 的InGaAs已被广泛使用,但其性能有局限性.

研究的目的:

开发新型,高性能光导式太赫兹探测器.
调查 (Rh) 杂的InGaAs在THz应用中的潜力.
为了比较Rh-doped InGaAs探测器与传统Fe-doped InGaAs探测器的性能.

主要方法:

使用分子束表达式 (epitaxy) 种植 (Rh) 合的甲 (InGaAs).
制造的光导天线用于连续波 (cw) 太赫兹检测.
采用同体光谱仪配置进行性能评估.
测量响应能力,噪声等效功率 (NEP),带宽和动态范围 (DNR).

主要成果:

与Rh-doped InGaAs相比,与Fe-doped InGaAs相比,具有更高的载体流动性,具有类似的载体寿命.
开发的Rh-doped InGaAs光导天线显示了相对于InGaAs:Fe探测器的响应能力和NEP的10倍改进.
创纪录的132dB的峰值动态范围 (DNR) 实现了,代表了20dB的增强.

结论:

与铁添加的InGaAs相比,添加的InGaAs是光导电梯赫兹探测器的优质材料.
这些新的探测器提供了显著增强的性能,特别是在响应和动态范围.
这些发现为更灵敏,更先进的太赫兹光谱系统铺平了道路.

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