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基于GaN基板的微LED的生长和特征

Guobin Wang, Jinpeng Huang, Yang Wang

|November 22, 2024

概括

同类epitaxial化 (GaN) 微型发光二极管 (LED) 显示出优越的均性和40%高的外部量子效率 (EQE) 比异质epitaxial. 优化通过减少缺陷和改进载体注入,进一步提高了EQE.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
光电学是指光电子产品.

背景情况:

微型发光二极管 (micro-LED) 技术的进步越来越依赖于理解脱位现象.
基于化 (GaN) 的微型LED对于下一代显示器和照明至关重要.

研究的目的:

为了研究表轴配置对基于GaN的微型LED性能的影响.
阐明V形坑形成背后的机制及其对设备统一性和效率的影响.

主要方法:

对同位素和异位素GaN微LED结构的比较分析.
脱位密度,残余应力和V形坑分布的表征.
优化同质皮质结构以提高外部量子效率 (EQE).

主要成果:

同位素的微型LED显示出明显较低的位移密度和残余应力,防止V形坑的形成,并确保卓越的均性.
相比于异质形的对应物,同质形微型LED实现了40%更高的峰值外部量子效率 (EQE).
优化同位素结构,利用在V形坑边壁的减少多量子井 (MQW) 厚度,将EQE从7.9%提高到14.8% (10A/cm2).

结论:

通过同位素化来降低脱位密度和残余应力对于高均度的微型LED来说至关重要.
优化了具有低能障碍MQW的同质形结构,显著提高了微型LED的性能,从而实现了高亮度和低功耗.
均生长为推进微型LED技术向更高的统一性和效率提供了一个有希望的途径.

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