相关实验视频

Updated: Jun 6, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.7K

超快速的载体和格子冷却在Ti2CTMXene薄膜中

Tong Wang1, Chengning Yao1, Ruoyu Gao1

  • 1Department of Chemistry and Centre for Processible Electronics, Imperial College London, London W12 0BZ, United Kingdom.

Nano letters
|November 22, 2024
PubMed
概括

新兴的碳化物 (Ti2CTx) MXene薄膜显示出快速的电子冷却 (2.6 ps) 和较慢的散热,这对于能量转换应用至关重要. 这些发现突显了它们在光伏和光热设备中的潜力.

关键词:
这就是MXenesenes.运载体冷却 运载体冷却散热散热热量的散发.格子冷却系统 格子冷却系统超快速光谱法 超快速光谱法

更多相关视频

Fabrication of Spatially Confined Complex Oxides08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.5K
Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording09:58

Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording

Published on: February 12, 2020

13.3K

相关概念视频

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
405