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Updated: Jun 6, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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通过位置控制的粒度边界在可控制地生长的星形MoS中实现高级高性能memristors2

Shangui Lan1,2, Fangyuan Zheng3, Changchun Ding4

  • 1Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, Zhejiang, China.

Nano letters
|November 22, 2024
PubMed
概括

研究人员开发了一种新方法,以制造具有控制粒度边界 (GB) 的星形二硫化物 (MoS2) 纳米片. 这一创新显著降低了memristive设备所需的电压,为高效的集成内存和计算铺平了道路.

关键词:
化学蒸气沉积 (CVD) 是一种化学蒸气沉积.可控制的合成策略.谷物边界 (GBs) 是指谷物的边界.记忆器的使用者过渡金属二甲基化物 (TMDs) 过渡金属二甲基化物

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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