使用六乙和H2等离子体对Al2O3的原子层蚀刻机制的研究
Nicholas J Chittock1,2, Joost F W Maas1, Ilker Tezsevin1
1Department of Applied Physics, Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands A.J.M.Mackus@tue.nl.
Journal of materials chemistry. C
|November 25, 2024
概括
这项研究引入了一种新的原子层蚀刻 (ALE) 工艺,使用六乙烯酸 (Hhfac) 和H2等离子体进行精确的Al2O3膜沉积. 这种新方法通过蚀刻抑制和表面清洁机制实现了亚纳米厚度控制.
科学领域:
- 材料科学 材料科学 材料科学
- 化学工程是化学工程的重要组成部分.
- 半导体制造业 半导体制造业
背景情况:
- 原子层蚀刻 (ALE) 对于制造集成电路中的先进3D结构至关重要.
- 开发新的ALE过程和理解它们的机制对于扩展半导体技术至关重要.
研究的目的:
- 为了研究使用六乙乙 (Hhfac) 和H2等离子体对Al2O3膜的同位素等离子体ALE过程.
- 通过实验和计算方法阐明这种ALE过程的潜在机制.
主要方法:
- 利用里叶变换红外光谱法 (FTIR) 来分析表面物种.
- 采用密度函数理论 (DFT) 模拟来建模表面相互作用.
- 在Al2O3膜上使用Hhfac和H2等离子体进行了等离子体增强的原子层蚀刻.
主要成果:
- 实现了精确的Al2O3薄膜厚度控制,蚀刻速率为0.16 ± 0.02nm/循环,并且具有98%的ALE协同效应.
- 确定了竞争性蚀刻和表面抑制反应,涉及Al2O3表面上的二子物种.
- DFT分析显示了蚀抑制和挥发性产品形成的有利配置.
结论:
- ALE工艺通过蚀刻抑制和表面清洁机制运行,使亚纳米厚度控制成为可能.
- 基于Hhfac的ALE工艺为Al2O3制造提供了最小的污染和低损坏.
- 了解表面粘合配置是优化下一代电子产品ALE流程的关键.
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