Search research articles

相关概念视频

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序

Same author

On-Chip Tuning of Superconductivity in Fullerides via Current-Driven Rb<sup>+</sup> Intercalation.

ACS nano·2026

Same author

Single-Metal-Atom Chains at Mirror Twin Boundaries in Transition Metal Dichalcogenides: Electronic, Magnetic, and Catalytic Properties.

ACS applied materials & interfaces·2026

Same author

Surface orientation-dependent electro-oxidation of a polycrystalline gold electrode.

Faraday discussions·2026

Same author

Defects and defect-mediated engineering of two-dimensional materials: challenges and open questions.

Beilstein journal of nanotechnology·2026

Same author

Large-Scale Integration of Experimental and Computational Data for 2D Materials.

ACS nano·2026

Same author

<math><semantics><msub><mi>MnBr</mi> <mn>2</mn></msub> <annotation>${\rm MnBr}_2$</annotation></semantics></math> on the Graphene on Ir(110) Substrate: Growth, Structure, and Super-Moiré.

Small (Weinheim an der Bergstrasse, Germany)·2026

关于 JoVE

概览领导团队博客 JoVE 帮助中心

作者

出版流程编辑委员会范围与政策同行评审常见问题投稿

图书馆员

用户评价订阅访问资源图书馆顾问委员会常见问题

研究

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments 存档

教育

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual 教师资源中心教师网站

使用条款与条件

Search research articles

相关实验视频

Updated: Jun 23, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

工程2D材料来自单层NbS₂

Timo Knispel¹, Daniela Mohrenstecher¹, Carsten Speckmann¹

¹II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, D-50937, Köln, Germany.

Small (Weinheim an der Bergstrasse, Germany)

|November 25, 2024

概括

此摘要是机器生成的。

研究人员从NbS2在石墨烯上合成了新的2D硫化材料Nb5/3S3-2D和Nb2S3-2D. 这些联结合的结构不同于预期的大量,强调表面效应.

关键词:

共价转换的共价转换.分子光束-表达性质-epitaxy.二硫化物是二硫化物中的一种.一个单一的单层层.

更多相关视频

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Published on: September 28, 2019

相关实验视频

Last Updated: Jun 23, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Published on: September 28, 2019

科学领域:

材料科学材料科学材料科学
表面科学是一门学科.
固态化学固态化学

背景情况:

二硫化物 (NbS2) 作为新型二维材料的前体.
单个单元细胞厚度的2D过渡金属硫化物的受控合成具有挑战性.
了解低维材料中的结构属性关系至关重要.

研究的目的:

为了合成和描述单单元细胞厚的2D硫化物相 (Nb5/3S3-2D和Nb2S3-2D).
调查这些新的二维材料的结构性质和粘合.
探索表面和接口效应对二维材料结构形成的影响.

主要方法:

2D NbS2 在石墨烯上通过分子光束的增长.
通过化或Nb沉积进行Nb5/3S3-2D和Nb2S3-2D的受控合成.
使用扫描道显微镜 (STM) 和光谱 (STS) 进行表征.
用于元素和化学状态分析的X射线光辐射光谱学 (XPS).
密度函数理论 (DFT) 计算用于结构阐明.

主要成果:

阶段纯2D Nb5 / 3S3-2D和Nb2S3-2D已经成功合成.
这些二维材料表现出没有范德瓦尔斯间隙的共价键.
实验结果与DFT计算相结合,揭示了独特的结构安排.
观察到的结构与预期的散装材料有很大差异.

结论:

新的单单单元细胞厚的2D硫化物可以被可控合成.
合成的二维材料具有明显的共价结构.
表面和接口效应在决定二维材料结构方面发挥着至关重要的作用,与大量预测有所不同.