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Updated: Jun 6, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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高级P型开关在InSe纳米片中用于互补的多功能系统

Minsu Kim1, Dongju Yeom1, Yongwook Seok1

  • 1School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), Daejeon 34141, Republic of Korea.

Nano letters
|November 25, 2024
PubMed
概括

这项研究表明,双极化 (InSe) 晶体管具有可调节的p型和n型行为. 这些设备使可重新配置的互补逻辑和可调节的整流器能够在没有复杂的兴奋剂或异构结构的情况下实现.

关键词:
这是一个双极的双极.印度化的化.多功能性的多功能性.在p型的p型车上.范德瓦尔斯的联系方式

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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