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使用SiN_x压力工程技术抑制AlGaN/GaN HEMT中的短通道效应

Chenkai Deng^1,2, Chuying Tang^1,2, Peiran Wang²

¹School of Electronic Information and Engineering, Harbin Institute of Technology, Harbin 150001, China.

Nanomaterials (Basel, Switzerland)

|November 26, 2024

概括

化 (SiNx) 应力工程有效地抑制了化 (GaN) 高电子流动性晶体管 (HEMT) 中的短通道效应. 这种技术提高了无线电频率电子设备的性能和可靠性.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电气工程电气工程

背景情况:

短通道效应 (SCE) 降低了先进晶体管的性能.
高电子移动性晶体管 (HEMT) 对于高频应用至关重要.
消极化层在设备的稳定性和性能方面发挥着关键作用.

研究的目的:

研究SiNx应力工程在AlGaN/GaN HEMTs中用于SCE抑制的新型应用.
分析对所观察到的改善负责的潜在物理机制.
为了证明提高设备性能和可靠性的潜力.

主要方法:

用不同的SiNx被动应力制造AlGaN/GaN HEMT.
设备电性能的表征,包括排水诱导的屏障降低 (DIBL).
在偏差下对屏障高度调制和准费米水平行为进行分析.

主要成果:

压缩SiNx应力显著提高异质连接屏障高度.
具有压力SiNx被动化的设备表现出明显较低的DIBL因子 (例如,在5V时2.25mV/V).
通过导电,下值摆动和泄漏电流的最小退化被观察到,排水偏差增加.

结论:

SiNx应力工程是一种可行的技术,用于减轻GaN HEMT中的SCE.
增强的屏障高度是提高设备稳定性和性能的关键.
这种方法为高性能,可靠的基于GaN的射频电子提供了途径.

关键词:

DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL DIBL 获得了HEMTs.特别资本公司 (SCEs) 是特别资本公司.SiNx压力工程的压力工程

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