相关实验视频

Updated: Jun 27, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.0K

在 (001) InP基板上生长的格子匹配的InAlAs层表面上的坑的性质

Dmitrii V Gulyaev1, Demid S Abramkin1,2,3, Dmitriy V Dmitriev1

  • 1Laboratory of Molecular-Beam Epitaxy of A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.

Nanomaterials (Basel, Switzerland)
|November 26, 2024
PubMed
概括

在InAlAs/InP层中的表面坑和组成集群与线程位移有关. 它们的形成是由局部压力场驱动的,这些压力场影响了在分子束表生长过程中印亚达的结合.

关键词:
在AlAs中.在 InPP 里面.吸附脱落方式 吸附脱落方式分子光束的表达式是epitaxy.固体合金 固体合金表面形态学 表面形态学表面坑是表面的坑.线程排序 排序 排序 排序 排序

更多相关视频

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.5K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

相关概念视频

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...