Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Biasing of FET01:22

Biasing of FET

218
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
218
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.6K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.6K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K
Charging Conductors By Induction01:15

Charging Conductors By Induction

7.6K
The Earth is a good conductor of electricity, and it is so big that it can be considered an infinite source or sink of charges. It can easily exchange charges with any matter.
Generally, conductors like metals do not allow any excess charge to be present on them. Any excess charge added to metals easily flows away, for example, when a metal is placed on the Earth. This process is called earthing.
However, conductors can be charged by a process called induction. For example, consider charging a...
7.6K
MOS Capacitor01:25

MOS Capacitor

707
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

294
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
294

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Fabrication of a quaternary ammonium chitosan/pomelo peel extract nanocarrier system for tea polyphenol delivery: characterization, stability, digestibility, and release properties.

Food chemistry: X·2026
Same author

A molecular timescale for evolution of cobamide biosynthesis.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Complementary nonlinear optics for polarimetric computing in tellurium.

Nature communications·2026
Same author

Morphology-Programmable Orthogonally Aligned Silicon Nanowire Arrays for Integrated Strain-Temperature Bimodal Sensing.

Nano letters·2026
Same author

Isostructural Doping in Ultrathin Molecular Crystals for Temperature-Immune and Ultralow-Power Organic Electronics.

ACS nano·2026
Same author

Screening Crystallographic Planes on Sapphire for Single-Crystal MoS<sub>2</sub> Epitaxy.

ACS nano·2026

相关实验视频

Updated: Jun 6, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K

在铁电神经电阻中进行接口电荷工程,用于完整的机器视觉系统.

Qinyong Dai1, Mengjiao Pei1, Jianhang Guo1

  • 1National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.

The journal of physical chemistry letters
|November 26, 2024
PubMed
概括

研究人员为先进的机器视觉系统 (MVS) 开发了模仿人类视觉系统的新型铁电神经元. 这些设备提供光适应感应和全光学重量更新,在具有挑战性的光线条件下实现93%的数字识别精度.

更多相关视频

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces
07:51

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

Published on: February 24, 2012

24.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

相关实验视频

Last Updated: Jun 6, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K
Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces
07:51

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

Published on: February 24, 2012

24.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

科学领域:

  • 材料科学 材料科学 材料科学
  • 神经科学是一个神经科学.
  • 计算机工程 计算机工程

背景情况:

  • 人工智能的进步需要模仿生物视觉系统的硬件.
  • 当前机器视觉系统 (MVS) 在复制视网膜功能和全光学重量更新方面存在局限性.

研究的目的:

  • 为了设计能够模仿人类视觉系统功能的铁电神经元.
  • 为了使一个完整的MVS能够对光电子特征进行动态调制.
  • 为了实现MVS处理器的全光学重量更新.

主要方法:

  • 通过改变PMMA电荷捕获层厚度来进行接口电荷工程.
  • 铁电神经istor的制造. 铁电神经istor的制造.
  • 设备光电子属性的表征和在MVS任务中的性能.

主要成果:

  • 神经电阻的铁电极化可以通过光或电脉冲来控制.
  • 这些设备具有自主光适应 (厚型PMMA) 或双向光响应 (薄型PMMA).
  • 中等厚度的PMMA设备通过全光脉冲显示线性导电量更新.
  • 使用这些神经晶体管的MVS在极端照明下实现了93%的准确性在手写数字识别中.

结论:

  • 开发的铁电神经阻塞为创建高能效和高度集成的智能MVS提供了可行的策略.
  • 这种方法可以实现动态调制和全光学控制,克服当前MVS技术的局限性.