一种跨度电热共模拟方法,用于电源MOSFET在设备-包装-散热器-板层
Yuxuan Dai1,2, Jiafei Yao1,2, Jing Chen1,2
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Micromachines
|November 27, 2024
概括
本研究引入了对功率MOSFET电热性能在设备-包装-散热板 (DPHB) 层面的交叉尺度模拟. 该方法准确地预测了芯片温度和排水电流的变化,有助于DPHB联合设计.
科学领域:
- 电气工程 电气工程
- 热管理 热管理
- 半导体设备物理 半导体设备物理
背景情况:
- 对功率MOSFET的精确电热分析对于可靠的电子系统设计至关重要.
- 现有的模拟方法往往难以捕捉不同尺度的合效应,从设备到板层.
- 了解芯片温度和排水电流变化对于优化性能和防止故障至关重要.
研究的目的:
- 提出一种新的跨度模拟方法,以评估功率MOSFET在设备-包装-散热板 (DPHB) 层面的稳定状态电热性能.
- 开发一个共同模拟框架,集成设备级和包装散热板 (PHB) 级的模拟.
- 为预测各种操作条件和结构参数下的芯片温度和排水电流变化提供一种通用方法.
主要方法:
- 设计了一个共模拟框架,使用一个代过程,将设备和PHB级模拟器之间的功耗和芯片温度联系起来.
- 该方法考虑了多层设置中的跨度电热合效应.
- 使用商用MOSFET (TO-220F) 进行实验验证,以提取芯片温度和流动数据.
主要成果:
- 拟议的跨尺度模拟方法有效地捕捉了不同尺度的电热合效应.
- 对于各种电压偏差,水平设置和DPHB结构参数,获得了芯片温度和温度依赖的排水电流的准确变化.
- 从共同模拟中得出一个经验方程,以精确描述排水电流与芯片温度的关系.
结论:
- 开发的跨尺度模拟方法对于分析功率 MOSFET 从微尺度设备到毫米级 DPHB 系统来说是强大的和通用的.
- 该方法提供了芯片温度和排水电流变化的准确预测,通过实验测量验证.
- 这项工作通过结合跨层次的物理洞察力,为DPHB级共同设计提供了有效的支持.
相关概念视频
01:16MOSFET
422
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
422
01:22MOSFET: Enhancement Mode
294
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
294
01:23Small-Signal Analysis of MOSFET Amplifiers
508
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
508
01:17Characteristics of MOSFET
344
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
344
01:17MOSFET Amplifiers
146
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
146
01:20MOSFET: Depletion Mode
322
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
322