基于实验数据的单一事件效应电流载波映射的评估
Mengtian Bao1, Ying Wang1, Jianqun Yang2
1School of Information Science and Technology, Dalian Maritime University, Dalian 116026, China.
Micromachines
|November 27, 2024
概括
本研究引入了一种新方法,通过观察电流变化来分析功率MOSFET中的辐射损伤. 该技术有助于了解在辐射事件期间的内部设备损伤及其严重程度.
科学领域:
- 半导体设备物理学 半导体设备物理
- 电子产品中的辐射效应.
- 材料科学是一种材料科学.
背景情况:
- 单一事件辐射损伤对功率MOSFET设备的可靠性构成重大威胁.
- 了解辐射损伤的内部物理机制和演变对于设备设计和硬化至关重要.
- 设备的当前外部特性往往与微观损伤过程没有直接的相关性.
研究的目的:
- 开发一种统计分析方法,用于评估功率MOSFET中的单一事件辐射损伤.
- 建立可观测的外部电流特征和内部微观物理量 (电流载体映射) 之间的联系.
- 提出识别辐射演变过程和损伤机制的方法.
主要方法:
- 基于门/排水电流的时间特征,开发了一种新的数据波动-崩转换分析方法.
- 使用当前数据定义了载体动态平衡比率,以量化辐射损伤程度.
- 技术计算机辅助设计 (TCAD) 模拟用于调查外部电气行为和内部物理现象之间的关系.
主要成果:
- 波动-崩转换分析有效地揭示了设备内的辐射事件的演变过程.
- 载体动态平衡比率为评估辐射损伤的严重程度提供了定量指标.
- TCAD模拟证实了外部电流动态和内部物理量演变之间的相关性.
结论:
- 拟议的当前数据时间分析提供了对内部辐射事件进展的更深入了解.
- 使用载体动态平衡比率的统计分析可以有效评估功率MOSFET中的辐射损伤程度.
- 这种方法为了解和减轻半导体设备中的辐射效应提供了有价值的工具.
相关概念视频
01:22Carrier Generation and Recombination
521
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
521
01:21Carrier Transport
405
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
405
01:30The Hall Effect
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Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
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