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内部调匹配的紧型GaN功率放大器,具有78.5%的PAE,用于2.45GHz无线功率传输系统
Caoyu Li1, Ziliang Zhang1,2, Yi Pei3
1Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
Micromachines
|November 27, 2024
概括
一个紧的,高效的功率放大器 (PA) 已开发用于使用化 (GaN) 高电子流动性晶体管 (HEMT) 的无线传输系统 (WPT). 这种设计在一个小的形状因素中实现了高输出功率和效率.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
背景情况:
- 微波无线功率传输 (WPT) 系统需要高效和紧的功率放大器 (PA).
- 现有的PA设计往往面临着整合水平和效率方面的挑战.
研究的目的:
- 为微波WPT系统设计和制造高效,紧的功率放大器.
- 为了满足WPT应用中的高集成和效率要求.
主要方法:
- 使用0.25μm化 (GaN) 高电子移动性晶体管 (HEMT).
- 实现了一个内部匹配的方法,用于紧的电路大小.
- 通过输出匹配电路优化输出第二和第三波阻抗.
- 控制输入第三波,以提高直流至射频转换效率.
主要成果:
- 实现了13.4 × 13.5 mm2.5 的紧型功率放大器尺寸.
- 在连续波 (CW) 测试下,在2.45GHz时显示出43.75dBm的输出功率.
- 测量出一个大信号增益15.75dB.
- 实现了78.5%的功率增加效率 (PAE).
结论:
- 设计的紧型PA满足了高效微波WPT系统的要求.
- 内部匹配方法简化了设计,减少了尺寸,而不会影响性能.
- 制造的PA表现出极好的输出功率,增益和功率增加效率.
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