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Updated: Jun 6, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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了解和量化等级化频道高电子移动性晶体管的好处

François Grandpierron1, Elodie Carneiro1, Lyes Ben-Hammou1

  • 1Institute of Electronics, Microelectronics and Nanotechnology, IEMN, 59652 Villeneuve-d'Ascq, France.

Micromachines
|November 27, 2024
PubMed
概括

升级化 (AlGaN) 通道高电子移动性晶体管 (HEMT) 为毫米波应用提供了更好的线性和效率. 这项技术增强了电子封闭,提高了先进电子设备的性能.

关键词:
在AlGaN等级通道中,AlGaN是分级的.这里是HEMT.这就是线性线性.模拟器模拟器模拟器模拟器通过导电的电流.

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