对Ku频段GaN HEMT功率放大器发展的审查
1School of Electronic Engineering, Kyonggi University, Suwon-Si 16227, Republic of Korea.
Micromachines
|November 27, 2024
概括
化 (GaN) 高电子移动性晶体管 (HEMT) 高功率放大器 (HPA) 在Ku频段应用中正在迅速发展. 单立式微波集成电路 (MMIC) 对未来的高效和集成放大器设计显示出更大的前景.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 微波工程 微波工程
背景情况:
- 库频段高功率放大器 (HPA) 对于卫星通信,无人机和军事雷达至关重要.
- 对于高频,高功率放大器的日益增长的需求是由全球数据通信扩张和国家安全需求所驱动的.
研究的目的:
- 审查Ku波段化 (GaN) 高电子移动性晶体管 (HEMT) HPAs的当前状态和进展.
- 为了比较不同的 GaN HEMT 工艺技术和 HPA 类别 (MMIC 与 IM-PAM).
- 探索Ku频段HPA的设计拓,关键问题和热管理技术.
主要方法:
- 对Ku频段HPA的GaN HEMT工艺技术进行文献综述.
- 单立式微波集成电路 (MMIC) 和内部匹配功率放大器模块 (IM-PAM) 的分类和比较.
- 设计拓学的分析,振荡预防,偏差电路和热管理.
主要成果:
- 碳化 (SiC) 基板具有0.25微米和0.15微米的门长度占主导地位.
- MMIC和IM-PAM可以达到高达100W的输出功率和30%的功率效率.
- MMIC功率放大器的性能正在比IM-PAM更快地发展,这表明未来的潜力更高.
结论:
- 由于提高了效率和集成,MMICs代表了未来Ku频段HPA开发的有希望的方向.
- 本综述提供了对Ku频段GaN HPA设计技术和未来研究方向的关键见解.
- 在满足高频通信和雷达系统日益增长的需求方面,GaN HEMT技术的持续进步至关重要.
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