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量子通道极端带隙 AlGaN HEMT 量子通道极端带隙

Michael Shur¹, Grigory Simin², Kamal Hussain³

¹Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

|November 27, 2024

概括

本研究介绍了一种先进的AlGaN量子通道高电子移动性晶体管 (HEMT),可以实现创纪录的断裂电压. 量子通道设计增强了电子的限制,从而带来了优越的功率设备性能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
半导体设备物理半导体设备物理

背景情况:

传统的高电子移动性晶体管 (HEMT) 面临着故障电压的限制.
在HEMT中量子通道的设计对于设备性能至关重要.
基于AlGaN的材料由于其宽带隙特性,为高功率应用提供了潜力.

研究的目的:

研究量子通道设计对AlGaN HEMT分解场的影响.
了解电子量子化和极化场在提高设备性能方面的作用.
为了证明量子通道HEMT在高级功率设备应用中的潜力.

主要方法:

金属有机化学蒸汽沉积 (MOCVD) 是AlGaN量子通道HEMT在AlN基板上的生长.
对临界分解场的描述和对电子气体量化效应的分析.
在高电场中研究量子启用的真实空间转移机制.

主要成果:

实现了11.37 MV/cm的临界分解场,超过了AlGaN通道材料的预期值.
证明二维电子气体中的电子量化对分解场的增加有显著的贡献.
观察到量子启用的电子进入屏障层的真实空间转移,进一步增强分解电压.

结论:

在AlGaN HEMT中,量子通道设计能够增强电子封闭和极化效应,从而导致创纪录的高分断电压.
这种方法克服了传统HEMT设计的局限性,特别是在低板电子密度下.
量子通道HEMT代表了开发下一代高功率电子设备的有希望的途径.

关键词:

这里是AlGaNN.这里是HEMT的家园.分解字段的分解字段.移动性是一种流动性.定量化定量化是什么

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