基于烯酸盐的光电阻聚合物的胀行为,含有各种大小的循环合组
Choong-Jae Lee1, Jinyoung Kim1, Geon-Ho Lee1
1Department of Energy Engineering, Soonchunhyang University, 22 Soonchunhyang-ro, Asan 31538, Republic of Korea.
Materials (Basel, Switzerland)
|November 27, 2024
概括
研究人员开发了具有较小功能组的新型光电阻聚合物,以减少半导体微电路制造中的胀. 基于环基甲酸盐 (CHMA) 的聚合物表现出优异的图案和最小的胀,改善了微电子制造.
科学领域:
- 材料科学 材料科学 材料科学
- 聚合物化学 聚合物化学
- 半导体制造业 半导体制造业
背景情况:
- 环化烯基单体为微电路光电阻提供高蚀刻性和热稳定性.
- 光电阻体中的大型单体尺寸增加了链间距,导致开发者胀,模式崩,并在微型制造过程中进行分层.
研究的目的:
- 设计和合成具有较小功能组的新型光电阻聚合物,以减轻胀并提高半导体微电路中的图案保真度.
- 调查功能组大小,聚合物链间距和ArF光电阻体中开发者诱导的胀之间的关系.
主要方法:
- 合成了ArF光电阻聚合物,使用具有不同功用组大小的单体,包括环基甲基酸盐 (CHMA),异乙烯酸盐 (IBOA) 和二cyclopentanyl甲基酸盐 (TCDMA).
- 描述了合成的聚合物,以确定开发者暴露时的链间距离和膨胀比率.
- 在微型制造条件下评估光电阻的图案性质和稳定性.
主要成果:
- 与CHMA (最小的功能组) 合成的聚合物表现出最短的链间距离和最低的膨胀比率 (109%).
- 与更大的功能组 (IBOA和TCDMA) 合成的聚合物显示出更大的链间距离和更高的胀比率 (分别为114%和112%).
- 基于CHMA的光电阻表现出极好的图案特性,而其他人则经历了分层.
结论:
- 在光电阻聚合物中减少功能组大小有效地减少链间距,并减少开发者诱导的胀.
- 基于CHMA的光电阻提供了一个有前途的解决方案,用于在负光电阻中实现高级微电路制造的高质量图案.
- 这种方法为克服半导体制造中的模式崩和分层问题提供了一个新的策略.
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