对于室温条件的四度 nBp InGaAsSb SWIR 探测器的理论研究
Tetiana Manyk1, Jarosław Rutkowski1, Małgorzata Kopytko1
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Materials (Basel, Switzerland)
|November 27, 2024
概括
这项研究分析了由AIIIBV材料制成的室温红外屏障探测器. 模拟显示,高性能是可以实现的,Shockley-Read-Hall重组显著影响载体运输.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- 红外屏障探测器对于各种应用至关重要.
- 在实际的红外传感中,室温操作是非常理想的.
- AIII BV 四元化合物为光电子设备提供可调节的特性.
研究的目的:
- 理论分析nBp红外屏障探测器在室温下运行的性能.
- 调查材料组成和设备结构对探测器性能的影响.
- 确认使用AIII BV材料制造高性能室温红外探测器的可行性.
主要方法:
- 使用Crosslight软件的APSYS包进行数值模拟的理论分析.
- 确定频段结构和电场分布.
- 对载体运输机制的分析,包括Shockley-Read-Hall (SRH) 重组.
主要成果:
- 肖克利-里德-霍尔 (SRH) 重组对于载体寿命在100 ns以下至关重要.
- 吸收器厚度显著影响量子效率,峰值在3微米左右.
- 值带偏移不会影响设备的性能.
- 屏障兴奋剂水平影响探测器参数.
结论:
- 高性能室温红外屏障探测器可以使用AIIIBV四级化合物制造.
- 优化吸收器厚度是最大化量子效率的关键.
- 了解SRH重组等载体运输机制对于设备设计至关重要.
相关概念视频
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At thermal equilibrium, the relative populations of excited and ground state atoms can be estimated using the Maxwell–Boltzmann distribution. For example, an increase in temperature from...


