关于用于2.5/3DHBM包整合的稀释和单离过程的Si特性.
MiKyeong Choi1, SeaHwan Kim1, TaeJoon Noh1
1School of Advanced Materials Science & Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea.
优化 (Si) 晶圆的稀释和分离对于先进的半导体包装至关重要. 抛光用于稀释和隐蔽切割用于单片化,在Si芯片中产生最高的断裂强度,提高可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体制造业 半导体制造业
背景情况:
- 先进的半导体包装依赖于2.5D和3D堆叠技术.
- 晶圆薄化和单体化对于生产更薄,更可靠的Si芯片至关重要,但它们对芯片完整性的影响需要进一步研究.
研究的目的:
- 系统地比较晶片稀释和单离过程对Si晶片的断裂强度的影响.
- 确定最佳的加工技术,以提高 Si 芯片在先进包装中的可靠性.
主要方法:
- 使用精细研磨,聚研磨和抛光进行晶圆薄化.
- 通过扫描电子显微镜和干扰仪进行表面形态和粗度分析.
- 使用拉曼光谱测量残余应力.
- 通过三点曲试验进行断裂强度评估.
- 评估的孤立方法:刀片切割,激光切割和隐蔽切割.
主要成果:
- 抛光导致了最小的残余应力和表面缺陷,导致稀释的Si晶片和芯片中最大的断裂强度.
- 较薄的晶圆 (60微米) 由于灵活性增加,比较厚的晶圆 (90微米,120微米) 具有更高的断裂强度.
- 与刀片和激光切割相比,隐蔽切割提供了更高的断裂强度.
结论:
- 通过抛光和通过隐形切割的单离结合晶片稀释,为高可靠性Si芯片生产提供了最佳的方法.
- 这些发现为在工业环境中为2.5D和3D包装选择加工技术提供了宝贵的指导.
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