相关实验视频

Updated: Jun 6, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.5K

混合动力高功率AlGaN/CdZnO/GaN/AlGaN HEMT,具有高分断电压

Bonghwan Kim1, Seung-Hwan Park1

  • 1Department of Semiconductor Electronic Engineering, Daegu Catholic University, Gyeongsan 38430, Gyeongbuk, Republic of Korea.

Materials (Basel, Switzerland)
|November 27, 2024
PubMed
概括

这项研究探讨了在高电子流动性晶体管 (HEMT) 中用氧化 (CdZnO) 取代印化 (InGaN). 在高功率应用中,基于CdZnO的HEMT显示出有希望的更高的排水电流和故障电压.

关键词:
在CdZnOO.在 GaN GaN 中.这里是HEMT.这是TCAD TCAD.断裂电压的故障电压是什么高功率电子产品的高功率电子通过导电的电流.

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