用于半导体加工的高温碳等离子体的数据驱动分析
Sung Kyu Jang1, Woosung Lee1, Ga In Choi1
1Electronic Convergence Material and Device Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea.
Sensors (Basel, Switzerland)
|November 27, 2024
概括
先进的半导体制造使用无形碳层 (ACL) 面膜,但碳污染需要等离子体清洗. 这项研究揭示了在高温等离子体条件下COF3的形成,为优化ACL过程提供了见解.
科学领域:
- 材料科学 材料科学 材料科学
- 等离子体物理学的物理学
- 化学工程是化学工程的重要组成部分.
背景情况:
- 无形碳层 (ACL) 面膜对于3D-NAND和DRAM制造中的高比例蚀刻至关重要.
- 在ACL沉积室中的碳污染需要有效的等离子体清洗方法.
研究的目的:
- 在ACL沉积室的高温等离子体清洗过程中分析气体物种变化.
- 了解工艺条件对气体动态的影响,并确定关键反应途径.
主要方法:
- 使用高温电感合等离子体 (ICP) 系统.
- 使用飞行时间质谱仪 (ToF-MS) 进行气体物种分析.
- 应用主要组件分析 (PCA) 和非负矩阵因数分解 (NMF) 用于数据解释.
- 使用第一顺序加死亡时间 (FOPDT) 模型量化动态气体信号变化.
主要成果:
- 确定了参与等离子体清洁过程的关键气体物种.
- 在高气体温度和等离子体功率水平下观察到COF3的形成.
- 在特定的高温条件下表明了额外的反应途径的存在.
结论:
- 提供了对ACL清洗中高温等离子体相互作用的全面了解.
- 为优化半导体制造中的ACL流程提出了新的战略建议.
- 突出了COF3形成在流程优化中的重要性.
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