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斯电子设备具有超薄的高-κ门介电器,直接集成在1T'-MoTe2上

Enzi Chen1, Qing Zhu1, Yaoyu Duan2

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China.

ACS applied materials & interfaces
|November 27, 2024
PubMed
概括

原子层沉积使二维过渡金属石化物 (TMDC) 上的超薄高κ介电物成为可能. 这便于高性能场效应晶体管 (FET) 和集成逻辑电路,提高了门的效率和可扩展性.

关键词:
1T′-MoTe2是什么意思雅努斯公司的材料.原子层沉积的原子层沉积.场效应晶体管的领域效应晶体管.高κ介电介电材料的使用

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