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Updated: Jun 6, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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在h-BN/石墨烯/h-BN范德瓦尔斯垂直异构结构中具有光效应的纯自旋电流生成

Xixi Tao1, Peng Jiang2, Yaojun Dong1

  • 1School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.

Physical chemistry chemical physics : PCCP
|November 28, 2024
PubMed
概括

研究人员开发了一种新方法,利用范德瓦尔斯异构结构中的光效应 (PGE) 产生纯自旋电流. 这种方法提供了一种强大的方法,可以为自旋电子设备创建自旋电流.

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