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基于Y₂O₃隔离层的INA纳米线场效应晶体管的增强电气性能

Yi-Fan Jiang¹, Jia-Min Tian¹, Tong Li¹

¹Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces

|November 29, 2024

概括

用氧化物 (Y2O3) 介电被动化取代原生氧化 (InAs) 替换纳米线 (NW) 场效应晶体管 (FET) 的性能和稳定性显著提高.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

化 (InAs) 纳米线 (NW) 场效应晶体管 (FET) 是下一代集成电路的前景,因为其优良的电气性能.
InAs NWs上的原生氧化物有缺陷,阻碍了表面被动化和门堆中的高效隔离,与Si/SiO2系统不同.

研究的目的:

研究使用稳定的氧化 (Y2O3) 作为隔离层 (IL),以取代 InAs NW FET 中的原生氧化物.
改进INA的NW FET的表面被动化,通道隔离和整体电性能.

主要方法:

制造顶门和双门INA NW FET,其中Y2O3作为隔离层 (IL) 和HfO2作为高k介电.
电气特性包括下值摆动 (SS),开关比,场效应移动性 (μFE) 和排水诱导的屏障降低 (DIBL).
在长期暴露于空气和低温测量后评估设备稳定性,以评估接口质量.

主要成果:

使用Y2O3 IL的顶门设备表现出卓越的性能:SS为77 mV/dec,高开关比,μFE为1845 cm2/V·s,以及9.1 × 10^11 eV^-1 cm^-2.2的低接口陷密度 (Dit).
双门FET实现了出色的门控制 (DIBL降至35mV/V) 和2711cm2/V·s的记录μFE.
具有Y2O3 IL的设备显示出对空气暴露的增强稳定性和改进的接口质量,如低温测量所示.

结论:

氧化物 (Y2O3) 有效地使InAs NW表面被动,并与原生氧化物相比,作为一个优越的隔离层 (IL).
Y2O3/HfO2 InAs NW FET显示了未来节点中数字集成电路的巨大潜力.
Y2O3被动化策略对于推进其他III-V NW装置有价值.

关键词:

在As纳米线中,纳米线在Y2O3介电器上.电气性能电气性能电气性能场效应晶体管电晶体管.界面质量界面质量界面质量隔离层是一种隔离层.

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