Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

707
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Promoting Psychological Resilience Against Academic Burnout: A JD-R Framework Analysis of Self-Compassion as a Mental Health Resource for Diverse Student Populations.

Healthcare (Basel, Switzerland)·2026
Same author

Governing Thermal Transport in Three-Dimensional Electronics.

ACS nano·2026
Same author

Correction: INO80 regulates promoter-associated R-loops to coordinate transcription and maintain genome stability in embryonic stem cells.

Biological research·2026
Same author

Sensorimotor network hyperactivity and impaired psychomotor performance associated with cumulative occupational stress in firefighters.

Brain research bulletin·2026
Same author

Network-level structural alterations distinguish persistent from remitted post-traumatic stress disorder: a morphometric covariance approach.

European journal of psychotraumatology·2026
Same author

Gate dielectric stack design for 2D materials-based electronics.

Nano convergence·2026

相关实验视频

Updated: Jun 6, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K

基于化的晶度控制的六角基记忆器,用于完全集成的储计算处理器.

Wonbae Ahn1, Sejin Lee1, Jungyeop Oh1

  • 1School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Advanced materials (Deerfield Beach, Fla.)
|December 2, 2024
PubMed
概括

研究人员开发了一种新方法来合成纳米晶体六角化 (NC h-BN) 用于memristors. 这一创新使得能够创建高精度,集成的水库计算处理器,用于时间数据推断.

关键词:
两维材料是二维材料.3D整合 3D整合控制晶度的控制方法六角性的化.纪念馆的修复者储水池计算计算的使用方法

更多相关视频

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

相关实验视频

Last Updated: Jun 6, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

8.9K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术纳米技术
  • 神经科学是一个神经科学.

背景情况:

  • 使用2D材料 (2DMs) 的memristors显示为先进计算的前景.
  • 传统的2DM合成方法会导致memristor阵列中的缺陷和设备不均.
  • 高合成温度和机械转移阻碍了2DM记忆器的大面积集成.

研究的目的:

  • 开发一种用于memristor应用的纳米晶体2DMs的新型合成方法.
  • 展示使用晶度控制的六角化 (h-BN) 完全集成的储计算处理器.
  • 为了研究NC h-BN和无形化 (a-BN) 记忆器的切换特性.

主要方法:

  • 在金属电极上直接合成可控制晶度的六角化.
  • 使用纳米晶 h-BN (NC h-BN) 和无形化 (a-BN) 制造记忆器.
  • 三维集成NC h-BN和a-BN记忆器,以创建一个储库计算处理器.

主要成果:

  • NC h-BN 记忆器表现出挥发性的切换和可靠的储动力学.
  • a-BN记忆电阻显示了非挥发性切换与线性强化/压缩.
  • 集成的3D处理器在推断时间数据方面实现了高精度.

结论:

  • 控制晶度的h-BN合成对于统一的memristor阵列至关重要.
  • 开发的方法使得能够创建高效的,集成的水库计算处理器.
  • 这种方法有助于实现用于时间数据处理的先进神经网络硬件.