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Updated: Jun 6, 2025
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Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
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没有稀有金属的超宽带近红外
Guojun Zheng1,2, Chenjie Lou3, Zeyue Yuan4,5
1Institute of Light+X Science and Technology, College of Information Science and Engineering, Ningbo University, Ningbo, 315211, China.
Advanced materials (Deerfield Beach, Fla.)
|December 2, 2024
概括
研究人员为超宽带近红外 (NIR) 辐射开发了无稀金属. 这些新材料实现了高效率和稳定性,克服了以前的NIR发射器的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 光子学是指光子学的使用方法.
背景情况:
- 三价 (Cr3+) 是一个有前途的近红外 (NIR) 发射器,但其应用受到依赖稀有金属宿主,低内部量子效率 (IQE) 和低热稳定性的阻碍.
- 现有的Cr3+合材料往往表现出有限的超宽带NIR发射,限制了它们在先进光学技术中的使用.
研究的目的:
- 开发高性能,没有稀有金属的超宽带NIR光器.
- 调查MgAl2O4旋转 (MAS) 中弱场Cr3+中心的起源,并增强其NIR发射特性.
- 为了提高NIR发光器件的光电效率和光谱稳定性.
主要方法:
- 合成的Cr3+合的MgAl2O4螺旋 (MAS) 和其衍生品与受控的固体测量 (过量Al2O3/Ga2O3).
- 将SiO2引入到Al2O3过剩的MAS中,以修改当地的晶体场,并在Cr3+位点中打破反转对称.
- 制造的转换发光二极管 (pcLED) 使用开发的.
主要成果:
- 在MAS中确定了固有的弱场Cr3+中心,负责近单位IQE的超宽带NIR发射.
- 证明了旋结构中的阴离子倒置和SiO2的添加显著增加了NIR排放.
- 在制造的pcLED中实现了高光电效率 (16.0%) 和光功率 (180.8 mW),具有出色的光谱稳定性.
结论:
- 基于Cr3+合MAS的无稀金属超宽带NIR光器可以通过控制阴离子倒置和晶体场对称性来实现.
- 与现有的最先进的NIR发射器相比,开发的光器提供了更高的性能.
- 这项工作为各种应用程序的高效和稳定的NIR光源铺平了道路.
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