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在微波辅助的溶热铁酸膜中进行Sub-1 V值切换及其在切换MoS₂-Phase FETs中的应用

Sooraj Sanjay¹, Sarath Arackal¹, Archini Paruthi¹

¹Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.

ACS applied materials & interfaces

|December 2, 2024

概括

我们开发了一种微波辅助的铁膜溶热过程,使高效电子设备的低能电阻切换成为可能. 这种进步为可持续的低功耗计算解决方案提供了途径.

科学领域:

材料科学材料科学材料科学
固态电子固态电子
纳米技术纳米技术

背景情况:

电阻开关元件为新兴计算提供了节能和空间高效的逻辑操作.
单电阻值开关可以取代数十个标准CMOS晶体管,并使混合相FET具有的下值斜率.

研究的目的:

报告使用微波辅助溶热 (MAS) 工艺的铁 (NF) 薄膜的后端线 (BEOL) 兼容整合.
研究NF薄膜在低能电化学金属化中的潜力及其在先进电子设备中的应用.

主要方法:

使用微波辅助溶热 (MAS) 工艺制造铁 (NF) 薄膜.
将NF薄膜集成到Ag接触器件和MoS2 FET中.
电气表征和横截面高分辨率传输电子显微镜 (HR-TEM) 用于导线形成分析.

主要成果:

与Ag接触的NF薄膜表现出具有低电成形 (<1V) 和值电压 (0.8V和0.16V) 的挥发性值切换.
在NF薄膜中实现了低电形电场 (107kV/cm),适用于螺旋铁.
在MoS2 FET中集成的NF膜显示了的切换相位行为,其下值斜率为8.5 mV/dec,超过了博尔茨曼极限.

结论:

马斯工艺是BEOL介电一体化的可行选择.
NF膜为CMOS逻辑应用提供了可持续,廉价和低功耗电子设备的途径.
来自HR-TEM的光纤形成洞察力可以进一步提高设备性能.

关键词:

博尔兹曼的极限是什么?在FET中,FET是FET.在MoS2的基础上,MoS2 微波合成微波合成尼克尔铁酸铁是什么意思的开关的开关.门开关门开关是指门开关.

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