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Updated: Jun 6, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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可切换的3D光子晶体基于VO2中绝缘体到金属的过渡

Jun Peng1, Julia Brandt2, Maurice Pfeiffer2

  • 1Center for Hybrid Nanostructures, Universität Hamburg, Luruper Chaussee 149, 22607 Hamburg, Germany.

ACS applied materials & interfaces
|December 2, 2024
PubMed
概括

研究人员使用二氧化瓦纳 (VO2) 开发了可切换的3D光子晶体. 这些结构允许对近红外光传播进行调节控制,为自适应光子设备铺平了道路.

关键词:
原子层沉积的原子层沉积.从绝缘体到金属的过渡反向的阿帕尔 (Opal) 是一个反向的阿帕尔.可切换光子学可以切换光子学二氧化瓦纳二氧化是什么

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Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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