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可调节的WSe₂-MoSe₂ 侧向异质连接光探测器基于压电和柔电效应

Sunwen Zhao^1,2, Xiaochi Tai^3,4, Runhan Xiao^1,2

¹Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.

ACS applied materials & interfaces

|December 3, 2024

概括

本研究探讨了WSe2-MoSe2的侧向异质连接,用于增强的可穿戴设备. 这些连接利用柔电和压电效应来显著提高光探测器的性能,特别是在应变下.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二维过渡金属二甲基化物 (TMDs) 具有压电性质,使其成为可穿戴电子产品的前景.
垂直异质连接增强了压电性能,但受到接口污染和有限的内置电场宽度 (BFW) 的影响.

研究的目的:

为了研究单层WSe2-MoSe2中侧向异质连接的使用,以提高电机学光电子效率.
了解压电和柔电效应在调节光探测器性能方面的联合作用.

主要方法:

单层WSe2-MoSe2的横向异质连接的制造,带线对齐为II型.
将外部压力和拉力应变应用于异质连接装置.
在不同的应变条件下测量光电流和暗电流.

主要成果:

侧向异质连接显示了相当大的内置电场宽度 (BFW),促进了快速的载波分离.
格子不匹配引发了柔电效应,这与压电效应一起调节了光电探测器的性能.
光电流在压力应变下增加了9.1倍 (-0.93%) 与拉力应变 (0.47%) 相比.
柔电效应在不应力条件下减少了暗电流.

结论:

由于显著的BFW和联合的柔电-零电效应,WSe2-MoSe2的侧向异质连接提供了增强的电机光电子效率.
应变工程是一种可行的方法来调整这些设备中的光探测器性能.
这些发现表明横向异质连接装置在柔性低光检测中的潜在应用.

关键词:

门痛症 (TMDs) 是一种门痛症.灵活的电力电力.侧面的p-n连接点摄影探测器的光检测器压电的电力是压电的.

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