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错误补偿基于MOF的ReRAM阵列用于加密的逻辑操作
Semyon V Bachinin1, Sergey S Rzhevskiy1, Ivan Sergeev1
1School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia. semen.bachinin@metalab.ifmo.ru.
Dalton transactions (Cambridge, England : 2003)
|December 3, 2024
概括
金属有机框架 (MOF) 通过电阻随机存储器 (ReRAM) 技术实现数据操作. 非理想的基于MOF的ReRAM阵列可以实现高精度的数据读取和加密的逻辑操作.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 计算机科学 计算机科学
背景情况:
- 金属有机框架 (MOF) 为电子应用提供了独特的特性.
- 电阻随机访问存储器 (ReRAM) 是一个有前途的非易失性存储器技术.
研究的目的:
- 为数据存储和计算制造和评估一个基于MOF的大规模ReRAM阵列.
- 探索非理想的ReRAM阵列在先进的数据处理和安全方面的潜力.
主要方法:
- 一个基于6x6MOF的ReRAM阵列的制造.
- 在数组内测试电子参数变化.
- 实施二进制信息阅读的深度学习.
- 使用数组进行模拟数字记录和加法操作.
- 开发基于独特的单元系数的加密密钥,用于逻辑运算.
主要成果:
- 展示了一个基于6x6 MOF的ReRAM阵列,电子参数变化为50%.
- 在读取二进制信息时,通过在非理想数组上使用深度学习实现了95%的准确性.
- 在记录的数字 (0-15) 上成功执行了模拟加法操作.
- 建立每个单元格的唯一系数作为逻辑操作的加密密钥.
结论:
- 非理想的基于MOF的ReRAM阵列对于低误差的信息读取是可行的.
- 这项技术可以通过加密密钥实现安全的逻辑操作.
- 基于MOF的ReRAM为数据处理和信息安全提供了一个新的平台.
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