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Updated: Jun 6, 2025

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通过静电工程设计狭间隙半导体薄膜的拓和断片化

Tixuan Tan1, Aidan P Reddy2, Liang Fu2

  • 1Department of Physics, <a href="https://ror.org/00f54p054">Stanford University</a>, Stanford, California 94305, USA.

Physical review letters
|December 3, 2024
PubMed
概括

研究人员在半导体薄膜中使用静电电位设计了拓平面微波段. 这些波段承载着奇特的量子状态,比如没有磁场的微量量子异常霍尔效应.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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