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Updated: Jun 5, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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通过控制相位和自组装纳米通道在HfO2中的多级电阻切换动力学

Tanmayee Parida1, Minh Anh Luong2, Santanu Das3

  • 1Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence, Gautam Buddha Nagar, Uttar Pradesh, 201314, India.

Small (Weinheim an der Bergstrasse, Germany)
|December 5, 2024
PubMed
概括

通过基板温度控制HfO2膜中的氧气空缺,可以在电阻开关装置中准确地形成导电丝. 这一突破增强了高级内存应用的多级电阻切换.

关键词:
它们是HfO2膜.c 迁移 迁移 迁移 迁移导电性灯光是指导导电的导电性灯光.多层电阻开关多层电阻开关氧气空缺的地方.自组装的纳米通道.

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