完全打印的零静态功率MoS2开关编码可重新配置的石墨烯元表面,用于RF/微波电磁波操纵和控制
Xiaoyu Xiao1, Zixing Peng2, Zirui Zhang1
1Department of Electrical and Electronics, University of Manchester, Manchester, M13 9PL, UK.
Nature communications
|December 5, 2024
概括
印刷的银/二硫化物/银异构结构为电子产品提供零静态电源开关. 这种可打印技术可以为先进的无线通信和传感应用实现可重新配置的超表面.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 降低电力消耗对于现代电子设备至关重要.
- 零静态电源开关保持没有连续电压的状态,但面临CMOS兼容性挑战.
- 可打印技术在柔性基板上提供低成本,环境温度的制造.
研究的目的:
- 为了证明印刷的Ag/MoS2/Ag异构结构作为零静态电源开关.
- 将这些开关集成到可重新配置的超表面中,用于电磁波操纵.
- 探索这个平台在无线通信,传感和全息技术中的应用.
主要方法:
- 印刷的Ag/MoS2/Ag异构结构的制造.
- 与石墨烯集成以提高功能.
- 在射频/微波频谱中测试开关性能.
- 展示可重新配置的地表能力.
主要成果:
- 打印的Ag/MoS2/Ag异构结构可以作为有效的零静态电源开关.
- 该平台在与石墨烯相结合时,可以实现完全集成的可重新配置的超表面.
- 在各种应用中证明了对电磁波操纵的潜力.
- 观察到的MoS2相变促进导电纤维的Ag扩散.
结论:
- 可打印的Ag/MoS2/Ag异构结构为低功耗电子开关提供了可行的解决方案.
- 开发的平台为下一代无线技术提供了先进的可重新配置的超表面.
- 这种方法为电磁波控制提供了一个低成本,灵活的替代方案.
更多相关视频
相关概念视频
MOSFET: Enhancement Mode
288
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
288
MOSFET
422
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
422
MOS Capacitor
707
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707
Characteristics of MOSFET
342
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
342
MOSFET: Depletion Mode
322
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
322
MOSFET Amplifiers
146
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
146


