基于C环合的太赫兹元芯片开关
Sen Gong1,2, Hongxin Zeng1,2, Qianyu Zhang1,2
1Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Nanophotonics (Berlin, Germany)
|December 5, 2024
概括
这项研究引入了一种使用InP-HEMT技术的新型太赫兹元芯片开关. 新设计增强了未来通信和成像系统的切换性能.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 物理 物理学 物理
背景情况:
- 太赫兹 (THz) 开关对于先进的通信,雷达和成像至关重要.
- 传统的THz开关由于在亚波长尺度下强大的电磁合而面临限制.
- 满足日益增长的应用需求需要创新的THz开关设计.
研究的目的:
- 提出并演示一个并行拓的太赫兹元芯片开关.
- 通过利用电磁合来克服传统THz开关的局限性.
- 为了改善未来应用的太赫兹开关的性能.
主要方法:
- 一个新的元芯片开关设计,结合了等效电路理论和电磁合.
- 使用90nm门长度的化高电子移动性晶体管 (InP-HEMT) 工艺制造元芯片.
- 在InP-HEMT中调整二维电子气体的密度,以控制电磁合.
主要成果:
- 制造的C环加载元芯片开关实现了低于1dB的插入损失.
- 证明了10dB的切换比率.
- 性能与没有C环的设备相比提高了20%,保持了低插入损失.
结论:
- 拟议的并行拓的太赫兹元芯片交换机提供了显著的优势.
- 该设计显示了对开发先进的太赫兹频段功能设备的积极影响.
- 这项工作为在通信和成像系统中改进太赫兹开关性能铺平了道路.
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