相关实验视频

Updated: Jun 5, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

单层MoS2在不同合的GaN基板上的大规模合成和激子动态

Pengcheng Jian1, Xueqing Cai1, Yongming Zhao1

  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
概括

我们开发了一种简单的方法,在化 (GaN) 上大规模合成二硫化物 (MoS2). 加N的兴奋剂类型会影响MoS2激子的动态,影响光电子设备的性能.

关键词:
在CVD中,CVD是非常重要的.在MoS2/GaN的异构结构中.激发动力学 激发动力学大规模的合成合成.基质诱导的兴奋剂是基质诱导的

更多相关视频

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707