在光子集成电路中连续体中边界状态的异常点
Haoye Qin1,2, Xiaodong Shi3, Haiyan Ou3
1Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
Nanophotonics (Berlin, Germany)
|December 5, 2024
概括
我们演示了连续 (BIC) 峰值中的合并束状态,以减少光子集成电路中的异常点 (EP) 的损失. 这使得超低损耗,高性能光子设备的新型设计成为可能.
科学领域:
- 光子学 是一个光子学.
- 集成光学 集成光学 集成光学
- 超材料是指一种超材料.
背景情况:
- 连续体中的边界状态 (BIC) 提供无损光束.
- 非赫米特系统中的特殊点 (EP) 具有独特的特性,但往往遭受高损失.
- 光子集成电路 (PIC) 对于先进的光学功能至关重要.
研究的目的:
- 在结合的光子结构中,在连续 (BIC) 中的边界状态实现异常点 (EP).
- 显著降低与EPs相关的损失率.
- 在PIC中探索赫尔密斯和非赫尔密斯系统之间的过渡.
主要方法:
- 在薄膜光子集成平台上使用由电子束电阻制成的合条带.
- 采用双BIC计划来合并BIC峰值并减少EP损失.
- 分析自身向量的正交度来评估赫米特和非赫米特特征.
主要成果:
- 在BICs成功实现了EP,在PICs中成功实现了EP.
- 通过合并BIC峰值,证明了EP损失率的显著降低.
- 展示了双BIC方案的工程设计,用于凝聚和直角自向量之间的受控过渡.
结论:
- 拟议的方法可以实现超低损耗相位匹配和EP和BIC在合准BIC系统中的特殊合条件.
- 这项工作为PIC中的动态EP环绕和EP拓学的进步铺平了道路.
- 提供了迈向高效和多功能集成光子设备的重要一步.
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